Degradation ¹ß»ý¿øÀÎ
1. Carrier Trap Çö»ó
Defect¿Í oxide Ç°Áú¿¡ ÀÇÇØ ÀüÀÚ°¡ oxide¿¡ ÀâÈ÷°Ô µÇ°í ÀâÈù ÀüÀÚ¿¡ ÀÇÇØ oxide°¡ charge¸¦ ¶ç°Ô µÇ¸é¼ Vth°¡ Áõ°¡, transconductance°¡ °¨¼ÒÇϴ Ư¼ºº¯È°¡ ³ªÅ¸³´Ù.
2. TDDB(Time Dependent Dielectric Breakdown)
TunnelingÀÌ µÇ´Â ÀüÀÚ¿¡ ÀÇÇØ oxide ³»ºÎ¿¡´Â electron hole generation Çö»óÀÌ ¹ß»ýÇÏ°Ô µÇ°í ÀüÀÚ´Â semiconductor, Á¤°øÀº metal·Î Á¤·ÄµÇ¾î oxide ³»ºÎ¿¡ field°¡ Çü¼ºµÇ¾î ±×¿¡ ÀÇÇØ Energy band°¡ ´Ù½Ã ÇÑ ¹ø º¯ÇÏ´Â Çö»óÀ» ¸»ÇÑ´Ù.
Short channel effect
Áö¼ÓÀûÀÎ °øÁ¤ ¹Ì¼¼È¿¡ ÀÇÇØ ¹ß»ýµÇ´Â ¹®Á¦Á¡
1. Vtn°¨¼Ò -> Vth ÀÚü Á¶Àý, body effect
2. Hot carrier effiect -> LDD(lightly doped drain)
3. DIBL(drain induced barrier lowering), Punch-through -> Halo doping